Optimization of Electric Field Distribution by Free Carrier Injection in Silicon Detectors Operated at Low Temperatures.

Authors :: Verbitskaya, E.
Abreu, M.
Bartsch, V.
Bell, W.
Berglund, P.
Bol, J.
de Boer, W.
Borer, K.
Buontempo, S.
Casagrande, L.
Chapuy, S.
Cindro, V.
D'Ambrosio, N.
Da Vi á, C.
Devine, S.R.H.
Dezillie, B.
Dierlamn, A.
Dimcovski, Z.
Eremin, V.
Source :: IEEE Transactions on Nuclear Science; Feb2002 Part 2 of 2, Vol. 49 Issue 1, p258, 6p, 1 Chart, 5 Graphs
Publication Year :: 2002
Abstract: Presents a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in silicon (Si) detectors irradiated by high neutron influences. Calculation of electric field distribution; Effect of the dependence of the optimal temperature for the electric field distribution in highly irradiated Si detectors; Discussion of the approach for electric field manipulation by free carrier injection.

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