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Electron holography characterization of the electrostatic potential of thin high-κ dielectric film embedded in gate stack.
- Source :
- Applied Physics Letters; 10/17/2011, Vol. 99 Issue 16, p163506, 3p, 1 Diagram, 3 Graphs
- Publication Year :
- 2011
-
Abstract
- The electrostatic potential of the thin high-κ dielectric film and related interfaces embedded in the gate stack can be profiled in high spatial resolution in the wedge-shape sample. The retrieved potential uncovers the uneven distribution with a maximum 15.6 ± 0.7 V in HfLaON dielectric film. It implies the non-uniform material distribution in high-κ thin film and physical parameter of the film, such as permittivity, should not be considered as the constant. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 66745000
- Full Text :
- https://doi.org/10.1063/1.3652770