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Morphology of thin film growth of gallium nitride by atmospheric pressure organometallic vapor phase epitaxy.
- Source :
- Proceedings of SPIE; Nov1996, Issue 1, p794-801, 8p
- Publication Year :
- 1996
Details
- Language :
- English
- ISSN :
- 0277786X
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Conference
- Accession number :
- 65840494
- Full Text :
- https://doi.org/10.1117/12.237057