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InGaAs quantum dot structures grown in GaAs barrier by metal-organic chemical vapor deposition for high-efficient long-wavelength emission.
- Source :
- Proceedings of SPIE; Nov2004, Issue 1, p44-51, 8p
- Publication Year :
- 2004
Details
- Language :
- English
- ISSN :
- 0277786X
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Conference
- Accession number :
- 65624791
- Full Text :
- https://doi.org/10.1117/12.528810