Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors.

MLA

Udhiarto, Arief, et al. “Trapping of a Photoexcited Electron by a Donor in Nanometer-Scale Phosphorus-Doped Silicon-on-Insulator Field-Effect Transistors.” Applied Physics Letters, vol. 99, no. 11, Sept. 2011, p. 113108. EBSCOhost, https://doi.org/10.1063/1.3637445.

APA

Udhiarto, A., Moraru, D., Mizuno, T., & Tabe, M. (2011). Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors. Applied Physics Letters, 99(11), 113108. https://doi.org/10.1063/1.3637445

Chicago

Udhiarto, Arief, Daniel Moraru, Takeshi Mizuno, and Michiharu Tabe. 2011. “Trapping of a Photoexcited Electron by a Donor in Nanometer-Scale Phosphorus-Doped Silicon-on-Insulator Field-Effect Transistors.” Applied Physics Letters 99 (11): 113108. doi:10.1063/1.3637445.