Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate.

Details

Language :

English

ISSN :

18626351

Volume :

7

Issue :

10

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

64960719

Full Text :

https://doi.org/10.1002/pssc.200983863