Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth.

Details

Language :

English

ISSN :

18626351

Volume :

5

Issue :

9

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

64959220

Full Text :

https://doi.org/10.1002/pssc.200779252