Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy.

MLA

Iida, Daisuke, et al. “Sidewall Epitaxial Lateral Overgrowth of Nonpolar A-Plane GaN by Metalorganic Vapor Phase Epitaxy.” Physica Status Solidi (C), vol. 5, no. 6, May 2008, pp. 1575–78. EBSCOhost, https://doi.org/10.1002/pssc.200778502.

APA

Iida, D., Kawashima, T., Iwaya, M., Kamiyama, S., Amano, H., & Akasaki, I. (2008). Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy. Physica Status Solidi (C), 5(6), 1575–1578. https://doi.org/10.1002/pssc.200778502

Chicago

Iida, Daisuke, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki. 2008. “Sidewall Epitaxial Lateral Overgrowth of Nonpolar A-Plane GaN by Metalorganic Vapor Phase Epitaxy.” Physica Status Solidi (C) 5 (6): 1575–78. doi:10.1002/pssc.200778502.