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Dislocation annihilation in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition.
- Source :
- Physica Status Solidi (C); May2008, Vol. 5 Issue 6, p1499-1501, 3p
- Publication Year :
- 2008
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 5
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 64958754
- Full Text :
- https://doi.org/10.1002/pssc.200778419