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Dislocation annihilation in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition.

Authors :
Fu, Y. K.
Tun, C. J.
Kuo, C. H.
Source :
Physica Status Solidi (C); May2008, Vol. 5 Issue 6, p1499-1501, 3p
Publication Year :
2008

Details

Language :
English
ISSN :
18626351
Volume :
5
Issue :
6
Database :
Complementary Index
Journal :
Physica Status Solidi (C)
Publication Type :
Academic Journal
Accession number :
64958754
Full Text :
https://doi.org/10.1002/pssc.200778419