Back to Search
Start Over
AlGaN/GaN MIS-HEMTs with HfO2 gate insulator.
- Source :
- Physica Status Solidi (C); Jun2007, Vol. 4 Issue 7, p2700-2703, 4p
- Publication Year :
- 2007
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 4
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 64957967
- Full Text :
- https://doi.org/10.1002/pssc.200674769