AlGaN/GaN MIS-HEMTs with HfO2 gate insulator.

Details

Language :

English

ISSN :

18626351

Volume :

4

Issue :

7

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

64957967

Full Text :

https://doi.org/10.1002/pssc.200674769