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Raman and TEM studies of Ge nanocrystal formation in SiOx:Ge/SiOx multilayers.
- Source :
- Physica Status Solidi (C); Feb2007, Vol. 4 Issue 2, p288-291, 4p
- Publication Year :
- 2007
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 4
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 64957550
- Full Text :
- https://doi.org/10.1002/pssc.200673233