Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance.

Details

Language :

English

ISSN :

18626351

Volume :

3

Issue :

6

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

64956852

Full Text :

https://doi.org/10.1002/pssc.200565465