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Membrane structures containing InGaN/GaN quantum wells fabricated by wet etching of sacrificial silicon substrates.
- Source :
- Physica Status Solidi (C); Jun2006, Vol. 3 Issue 6, p1949-1952, 4p
- Publication Year :
- 2006
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 3
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 64956684
- Full Text :
- https://doi.org/10.1002/pssc.200565188