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A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 \muV/^\circC Offset Drift.
- Source :
- IEEE Journal of Solid-State Circuits; Aug2011, Vol. 46 Issue 9, p2099-2107, 9p
- Publication Year :
- 2011
-
Abstract
- A MOS-input operational amplifier has a reconfigurable input stage that enables trimming of both offset and offset drift based only on single-temperature measurements. The input stage consists of a MOS differential pair, whose offset drift is predicted from offset voltage measurements made at well-defined bias currents. A theoretical motivation for this approach is presented and validated experimentally by characterizing the offset of pairs of discrete MOS transistors as a function of bias current and temperature. An opamp using the proposed single-temperature trimming technique has been designed and fabricated in a 0.5 \mum BiCMOS process. After single-temperature trimming, it achieves a maximum offset of \pm 30\ \muV and an offset drift of 0.33 \mu V/^\circC (3\sigma) over the temperature range of -40^\circC to +125^\circC. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189200
- Volume :
- 46
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Journal of Solid-State Circuits
- Publication Type :
- Academic Journal
- Accession number :
- 64470021
- Full Text :
- https://doi.org/10.1109/JSSC.2011.2139530