Growth of (103) fiber-textured SrBi[sub 2]Nb[sub 2]O[sub 9] films on Pt-coated silicon.

(103) fiber-textured SrBi[sub 2]Nb[sub 2]O[sub 9] thin films have been grown on Pt-coated Si substrates using a SrRuO[sub 3] buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) SrRuO[sub 3] grains on (111) Pt grains and in turn (103) SrBi[sub 2]Nb[sub 2]O[sub 9] grains on (111) SrRuO[sub 3] grains. The films exhibit remanent polarization values of 9 µC/cm². The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures. [ABSTRACT FROM AUTHOR]