Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source.

Details

Language :

English

ISSN :

18626351

Volume :

8

Issue :

7/8

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

63071317

Full Text :

https://doi.org/10.1002/pssc.201000969