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The deposition of a GaS epitaxial film on GaAs using an exchange reaction.
- Source :
- Applied Physics Letters; 8/26/1996, Vol. 69 Issue 9, p1244, 3p, 4 Black and White Photographs, 2 Graphs
- Publication Year :
- 1996
-
Abstract
- A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth-etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched from the substrate as arsenic sulfide. The surface of the resulting GaS thin film is characterized by a sharp (2×1) low energy electron diffraction pattern, indicating excellent crystalline quality. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- THIN films
GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 69
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 6290280
- Full Text :
- https://doi.org/10.1063/1.117425