Ohmic contacts to n-GaAs nanowires.

We report on the technology and the electrical properties of two different contact systems on n-GaAs nanowires. Annealed Ge/Ni/Ge/Au and Pd/Ge/Au multilayer metallization were investigated. Rapid thermal annealing at temperatures common for identical contact systems on n-GaAs layers is found to be crucial due to an enhanced out-diffusion of the Ga component into the Au contact layer. The maximum annealing temperatures ensuring intact nanowires are 320 °C for Ge/Ni/Ge/Au and 280 °C for Pd/Ge/Au. The fabricated Pd/Ge/Au contacts reveal a specific contacts resistance of 2.77 × 10-7 Ωcm2, which is about one order of magnitude lower compared to the values of Ge/Ni/Ge/Au and also lower than Pd/Ge/Au contacts on bulk material (1.2 × 10-6 Ωcm2). [ABSTRACT FROM AUTHOR]