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Total Internal Reflection Optical Switch in SOI With Defect Engineered Barrier Region.
- Source :
- Journal of Lightwave Technology; Sep2010, Vol. 28 Issue 17, p2483-2491, 9p
- Publication Year :
- 2010
-
Abstract
- Total internal reflection optical switches offer a switching operation which can be wavelength insensitive, thermally stable and polarisation independent. The implementation of such a switch based upon carrier injection in silicon is difficult due to the long diffusion lengths of injected free carriers. In this paper experimental results are presented which show that a reflective type switching operation is obtainable if a barrier formed of defective silicon is used to reduce free carrier diffusion. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07338724
- Volume :
- 28
- Issue :
- 17
- Database :
- Complementary Index
- Journal :
- Journal of Lightwave Technology
- Publication Type :
- Academic Journal
- Accession number :
- 62558873
- Full Text :
- https://doi.org/10.1109/JLT.2010.2053914