Influence of GaSb and AlGaInAsSb as Barrier Material on \sim2.8-\mum GaSb-Based Diode Laser Properties.

GaSb-based diode lasers emitting at a wavelength of 2.8 \mum have been grown. The devices feature GaSb or Al0.21Ga0.58In0.21As0.20Sb0.80 barrier layers for the quantum wells, respectively. The transparency current density, modal gain, internal absorption, and characteristic temperature have been investigated on both devices. Since the barrier layers serve at the same time as waveguide for the laser light, the optical properties and the impact on device performance have been determined. The refractive index for Al0.21Ga0.58In0.21As0.20Sb0.80 has been estimated to be 3.26.<?Pub _bookmark Command="[Quick Mark]"?> [ABSTRACT FROM PUBLISHER]