Charge deep level transient spectroscopy of electron traps in MOVPE grown n-GaN on sapphire.

Details

Language :

English

ISSN :

03701972

Volume :

245

Issue :

11

Database :

Complementary Index

Journal :

Physica Status Solidi (B)

Publication Type :

Academic Journal

Accession number :

62455817

Full Text :

https://doi.org/10.1002/pssb.200844243