Effects of Carrier Localization on the Optical Characteristics of MOCVD-Grown InGaN/GaN Heterostructures.

Details

Language :

English

ISSN :

03701972

Volume :

216

Issue :

1

Database :

Complementary Index

Journal :

Physica Status Solidi (B)

Publication Type :

Academic Journal

Accession number :

62451133

Full Text :

https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<181::AID-PSSB181>3.0.CO;2-W