30-band k·p method for quantum semiconductor heterostructures.

We illustrate how the linear combination of zone center bulk bands combined with the full-zone k·p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recently developed 30-band model which carefully reproduces atomistic calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short-period superlattices and large nanostructures where a three-dimensional electronic structure is required. This is illustrated by investigating ultrathin GaAs/AlAs superlattices. [ABSTRACT FROM AUTHOR]