Epitaxial growth of high mobility Bi2Se3 thin films on CdS.

Authors :: Kou, X. F.
He, L.
Xiu, F. X.
Lang, M. R.
Liao, Z. M.
Wang, Y.
Fedorov, A. V.
Yu, X. X.
Tang, J. S.
Huang, G.
Jiang, X. W.
Zhu, J. F.
Zou, J.
Wang, K. L.
Source :: Applied Physics Letters; 6/13/2011, Vol. 98 Issue 24, p242102, 3p, 3 Graphs
Publication Year :: 2011
Abstract: We report the experiment of high quality epitaxial growth of Bi<subscript>2</subscript>Se<subscript>3</subscript> thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi<subscript>2</subscript>Se<subscript>3</subscript> has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 μm. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of ∼6000 cm<superscript>2</superscript>/V s for the as-grown Bi<subscript>2</subscript>Se<subscript>3</subscript> thin films at temperatures below 30 K. These characteristics of Bi<subscript>2</subscript>Se<subscript>3</subscript> thin films promise a variety of potential applications in ultrafast, low-power dissipation devices. [ABSTRACT FROM AUTHOR]