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Development and Characterization of New 256\,\times\,256 Pixel DEPFET Detectors for X-Ray Astronomy.

Authors :
Meuris, Aline
Aschauer, Florian
De Vita, Giulio
Guenther, Bettina
Herrmann, Sven
Lauf, Thomas
Lechner, Peter
Lutz, Gerhard
Majewski, Petra
Miessner, Danilo
Porro, Matteo
Reiffers, Jonas
Stefanescu, Alexander
Schopper, Florian
Soltau, Heike
Strueder, Lothar
Treis, Johannes
Source :
IEEE Transactions on Nuclear Science; Jun2011 Part 3, Vol. 58 Issue 3, p1206-1211, 6p
Publication Year :
2011

Abstract

DEPFET detectors are silicon (Si) active pixel sensors designed and manufactured in the Max-Planck-Institut semiconductor lab. Their high spatial resolution and high energy resolution in X-rays make them attractive for particle tracking in colliders and for X-ray astronomy. This technology is foreseen for the Wide Field Imager of the International X-ray Observatory currently in study with ESA, NASA, and JAXA. New DEPFET matrixes with 256\,\times\,256 pixels of 75-\mum pitch have been produced, mounted on ceramic boards with dedicated front-end electronics and integrated in a new setup able to acquire large-format images and spectra. Excellent homogeneity has been observed. Energy resolution as low as 127 eV FWHM at 5.9 keV has been obtained including all single events of the matrix back illuminated at -45\,^\circC and read out at a 300-frames/s rate. This paper presents experimental methods and results. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
58
Issue :
3
Database :
Complementary Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
61254819
Full Text :
https://doi.org/10.1109/TNS.2011.2126599