Enhancement of Resistive Switching Characteristics in \Al2\O3-Based RRAM With Embedded Ruthenium Nanocrystals.

Resistive switching behaviors of \Al2\O3 -based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for nonvolatile-memory applications. Large resistance ratios (> \10^5) of high- to low-resistance states were observed with nanocrystals contribution. Moreover, improvements of stability device yield and retention performance were also achieved by embedding RuNCs. Therefore, the \Al2\O3-based resistive memory device composed of embedded nanocrystals is a possible solution for future integrated standalone storage class memory processes. [ABSTRACT FROM AUTHOR]