Monte Carlo simulation of nonlinear electron transport in semiconductors: Harmonics generation in GaAs.

The nonlinear response of electrons in a GaAs bulk semiconductor placed in an oscillating electric field with frequency in the far infrared domain is studied using the Monte Carlo method. The drift velocity obtained from the Monte Carlo simulation is used to obtain the efficiency of high order harmonics generation. Harmonics up to the 15th order with an efficiency of 10[sup -7] are resolved for a field with amplitude of E=50 kV/cm. It is also reported the dependence of the first four odd harmonics efficiencies on the lattice temperature in the range 80–400 K and on the amplitude of the electric field in the range 5–100 kV/cm. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]