Ultralow-Voltage Transparent \In2 \O3 Nanowire Electric-Double-Layer Transistors.

Fully transparent \In2\O3 nanowire transistors gated by LiCl-incorporated \SiO2-based solid electrolytes are fabricated on glass substrates at room temperature. Ultralow-voltage (0.4 V) operation of such a device is realized due to the extremely large electric-double-layer (EDL) capacitance (8.93 \mu\F/cm^2 at 20 Hz) of the composite solid electrolyte. The subthreshold slope and equivalent field-effect mobility of the transparent nanowire EDL transistors are estimated to be 70 mV/dec and 739.7 \cm^2/\V\cdot\s, respectively. Such ultralow-voltage transparent nanowire transistors are promising for portable invisible sensors. [ABSTRACT FROM PUBLISHER]