Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by \SiO2-Based Solid Electrolyte.

A simple self-assembling approach with only one nickel shadow mask is developed for flexible transparent thin-film transistors (TFTs) with patterned channel fabrication. An ultralow operation voltage of 1.5 V is realized due to the large specific gate capacitance (1.5 \mu\F/cm^2) of the microporous \SiO2-based solid-electrolyte dielectric. Flexible transparent indium–tin-oxide TFTs exhibit a good performance with a low subthreshold swing of < 70 mV/dec and a large on/off ratio of \sim\!\!\10^7, respectively. Such low-voltage flexible transparent TFTs with a simple self-assembling process are promising for portable flexible transparent electronics applications. [ABSTRACT FROM AUTHOR]