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Photo-Induced Carrier Recombination Properties of Silicon caused by H+ Implantation.
- Source :
- AIP Conference Proceedings; 1/7/2011, Vol. 1321 Issue 1, p212-215, 4p
- Publication Year :
- 2011
-
Abstract
- We report precise analysis of photo-induced carrier recombination properties in the case of hydrogen ion implantation to silicon substrates. Hydrogen ion implantation markedly decreased the effective minority carrier lifetime (τ<subscript>eff</subscript>) from 631 to 3.9 μs and increased the surface recombination velocity (S) from 50 to 12000 cm/s. 1.3×10<superscript>6</superscript> Pa H<subscript>2</subscript>O vapor heat treatment at 260 °C of 6 h changed τ<subscript>eff</subscript> and S to 13.2 μs and 4500 cm/s. Hydrogen ion implantation amorphized 290 nm deep surface region. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1321
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 57288917
- Full Text :
- https://doi.org/10.1063/1.3548352