Novel Approach to Conformal FINFET Extension Doping.

This paper presents a novel strategy to achieve conformal FINFET extension doping with low tilt-angle beam-line ion implantation. The process relies on the self-aligned cap layer formation exclusively on top of the FIN to tune doping levels in this particular area by partial dopant trapping. The conformality itself is evaluated for n- and p-type dopants by a novel extraction method applied to FIN resistor test structures. Furthermore, the process was integrated into a full NMOS device flow and compared to a highly tilted and more conformal As implant condition. [ABSTRACT FROM AUTHOR]