Stopping powers of 2–10 MeV Si, P and S ions in Ni, Cu and Ge thin films using a novel ERD-based technique.

The stopping powers of 2-10 MeV Si, P and S ions in Ni, Cu and Ge thin films has been measured using a novel technique based on elastic recoil detection (ERD). This technique eliminates the need to recalibrate the silicon surface barrier detector while changing the incident ion species. Results have been compared to SRIM 2000 and other theoretical predictions and experimental measurements. [ABSTRACT FROM AUTHOR]