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Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering.
- Source :
- Chinese Physics Letters; Dec2010, Vol. 27 Issue 12, p126802-126802, 1p
- Publication Year :
- 2010
-
Abstract
- We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100degC in N2 and in O2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100degC in N2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100degC in O2 ambient, the oxygen antisite contributes ZnO films to p-type. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 27
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 56475518
- Full Text :
- https://doi.org/10.1088/0256-307X/27/12/126802