PULSED LASER ANNEALING OF ULTRA-SHALLOW JUNCTIONS IN SILICON-GERMANIUM.

The effect of laser energy fluence and substrate heating on the annealing of boron-implanted silicon-germanium epitaxial layers on silicon was investigated. By making use of the difference in the melting points of silicon-germanium and silicon, a process window in the laser energy fluence can be found such that the meltdepth was confined within the silicon-germanium. Pre-heating of the substrate to 300°C was done to reduce the laser fluence required and improve the surface morphology. Cross-sectional transmission electron microscopy showed that there were no end-of-range defects due to ion implantation at the silicon-germanium/silicon interface after the laser annealing. [ABSTRACT FROM AUTHOR]