Structures and Dielectric Properties of SrNbxTi1-xO3 Thin Films Prepared by Pulsed Laser Deposition.

SrNbxTi1-xO3 (0.001 ≤ x ≤ 0.01) thin films have been prepared on Pt/TiO2/SiO2/Si (100) substrates by pulsed laser deposition. X-ray diffracttion and scanning electron microscope studies indicate that all the films were well crystallized and homogeneous with a cubic perovskite structure. Dielectric constant increases from 246 at x equals 0.001 to 342 at x equals 0.01, meanwhile, the dielectric tunability also increases. J-E characteristics of the films suggest that ohmic behavior is predominant at low electric field for all the films, but different conduction mechanisms are predominant at high electric field for the films with different x value. [ABSTRACT FROM AUTHOR]