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Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors.
- Source :
- Journal of Applied Physics; Nov2010, Vol. 108 Issue 9, p094505, 5p, 1 Chart, 6 Graphs
- Publication Year :
- 2010
-
Abstract
- A semiclassical two-dimensional ensemble Monte Carlo simulator is used to perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors (HEMTs). Kink effect, this is, an anomalous increase in the drain current I<subscript>D</subscript> when increasing the drain-to-source voltage V<subscript>DS</subscript>, leads to a reduction in the gain and a rise in the level of noise, thus limiting the utility of these devices for microwave applications. Due to the small band gap of InAs, InAs/AlSb HEMTs are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. The results indicate that, when V<subscript>DS</subscript> is high enough for the onset of impact ionization, holes thus generated tend to pile up in the buffer (at the gate-drain side) due to the valence-band energy barrier between the buffer and the channel. Due to this accumulation of positive charge the channel is further opened and I<subscript>D</subscript> increases, leading to the kink effect in the I-V characteristics and eventually to the device electrical breakdown. The understanding of this phenomenon provides useful information for the development of kink-effect-free InAs/AlSb HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 108
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 55200382
- Full Text :
- https://doi.org/10.1063/1.3503430