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On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC.
- Source :
- Applied Physics Letters; 11/8/2010, Vol. 97 Issue 19, p193510, 3p
- Publication Year :
- 2010
-
Abstract
- Heterojunctions of p<superscript>+</superscript> B-doped nanocrystalline diamond (NCD) to n<superscript>-</superscript> 4H-SiC were studied by electrical and cathodoluminescence (CL) methods. Current rectification at 30 °C had a curvature coefficient γ<subscript>0</subscript> of 42.1 V<superscript>-1</superscript> at zero bias, γ<subscript>max</subscript> of 105.35 V<superscript>-1</superscript> at 0.2 V, and a reverse current of <10 nA/cm<superscript>2</superscript>. The NCD sheet resistance decreased from 4.1×10<superscript>11</superscript> to 403.56 Ω/sq. as the carrier density N<subscript>s</subscript> was increased from 3.5×10<superscript>5</superscript> to 1.5×10<superscript>16</superscript> cm<superscript>-2</superscript> by B<subscript>2</subscript>H<subscript>6</subscript> doping. The 348 cm<superscript>2</superscript>/V-s mobility of the B-free NCD films was comparable to that of single crystal diamond. CL data revealed traps 0.6-0.8 eV from the NCD E<subscript>V</subscript> edge. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 55171809
- Full Text :
- https://doi.org/10.1063/1.3515858