High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps.

High-performance Y₂O₃/In₂O₃-based transparent thin-film transistors were processed featuring low thermal budget. The device shows a field-effect mobility of 43.5 cm² V^-1 s^-1, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 10⁸. These results are attributed to the high dielectric constant of Y₂O₃ and unique electronic structure of In₂O₃. Furthermore, the cubic phases of crystalline Y₂O₃ and In₂O₃ films have the identical crystal structure with a small lattice mismatch, which provides a well-defined dielectric/semiconductor interface for the optimal performance. [ABSTRACT FROM AUTHOR]