III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.

MLA

Wildeson, Isaac H., et al. “III-Nitride Nanopyramid Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy.” Journal of Applied Physics, vol. 108, no. 4, Sept. 2010, pp. 044303-43038. EBSCOhost, https://doi.org/10.1063/1.3466998.

APA

Wildeson, I. H., Colby, R., Ewoldt, D. A., Liang, Z., Zakharov, D. N., Zaluzec, N. J., García, R. E., Stach, E. A., & Sands, T. D. (2010). III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 108(4), 044303-43038. https://doi.org/10.1063/1.3466998

Chicago

Wildeson, Isaac H., Robert Colby, David A. Ewoldt, Zhiwen Liang, Dmitri N. Zakharov, Nestor J. Zaluzec, R. Edwin García, Eric A. Stach, and Timothy D. Sands. 2010. “III-Nitride Nanopyramid Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy.” Journal of Applied Physics 108 (4): 044303-43038. doi:10.1063/1.3466998.