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Formation of CuInSe2 by the selenization of sputtered Cu/In layers.

Authors :
BHATTACHARYYA, D.
FORBES, I .
ADURODIJA, F. O.
CARTER, M. J.
Source :
Journal of Materials Science; Mar1997, Vol. 32 Issue 7, p1889-1894, 6p, 2 Black and White Photographs, 1 Diagram, 6 Graphs
Publication Year :
1997

Abstract

Single layers of Cu and In were deposited onto Mo coated glass substrates by radio frequency sputtering. The Cu11In9 phase has been found to be the majority phase in these precursors. The selenization of the sputtered layers has been achieved by depositing a 1 μm Se layer onto the precursor by thermal evaporation followed by an annealing in vacuum. Samples were annealed at different temperatures varying between 100–600°C at intervals of 50°C. The chalcopyrite structured ternary phase of CuInSe2 with a significant amount of preferential orientation in the (112) direction was obtained in samples annealed at 400°C or above. Morphological, compositional and structural analyses of the samples annealed at different temperatures were performed using a variety of complementary techniques. The results were analysed to explain the growth of CuInSe2 on the selenization of sputtered Cu-In precursors. The occurrence of various binary phases of Cu-In, Cu-Se and In-Se in different annealing temperature ranges has also been investigated. The phenomenon of volume expansion in CuInSe2 on selenization has been found to manifest itself as a shift in the characteristic (110) X-ray diffraction peak of Mo. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00222461
Volume :
32
Issue :
7
Database :
Complementary Index
Journal :
Journal of Materials Science
Publication Type :
Academic Journal
Accession number :
52536159
Full Text :
https://doi.org/10.1023/A:1018517209661