Back to Search Start Over

Surface topography of etched GaAs surfaces.

Authors :
Sethi, B.R.
Hartnagel, H.L.
Jourdan, G.
Source :
International Journal of Electronics; May86, Vol. 60 Issue 5, p561, 3p
Publication Year :
1986

Abstract

Double replica TEM of etched (100) GaAs surfaces has shown that acidic etching gives rough island-type features whereas alkaline solutions seem to produce smooth surfaces. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
GALLIUM arsenide semiconductors
SEMICONDUCTOR etching

Details

Language :
English
ISSN :
00207217
Volume :
60
Issue :
5
Database :
Complementary Index
Journal :
International Journal of Electronics
Publication Type :
Academic Journal
Accession number :
5252573
Full Text :
https://doi.org/10.1080/00207218608920816
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details