Origin of point defects in AgInS[sub 2]/GaAs epilayer obtained from photoluminescence measurement.

The AgInS[sub 2] epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS[sub 2]/GaAs was found to be E[sub g](T)=2.1365 eV-(9.89×10[sup -3] eV)T[sup 2]/(2930+T). After the as-grown AgInS[sub 2]/GaAs was annealed in AgInS[sub 2]/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V[sub Ag], V[sub S], Ag[sub int], and S[sub int] obtained from PL measurements were classified as a donors or acceptors type AgInS[sub 2]/GaAs to an optical p type. Also, we confirmed that In in AgInS[sub 2]/GaAs did not form the native defects because In in AgInS[sub 2] did exist in the form of stable bonds. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]