Dielectric waveguide for middle and far infrared radiation.

The possibility of using the normal skin effect in dielectric waveguides for long-wavelength radiation is analyzed. A design of a waveguide integrated with a heterolaser is suggested, in which an undoped layer of GaAs is clad between heavily-doped n- and p-Al _x Ga_{1 − x} As alloy layers, reflecting radiation because of the normal skin effect. It is shown that an efficient waveguide can be formed using n-Al _x Ga_{1 − x} As layers with x < 0.45 and the electron concentration N > 5 × 10¹⁸ cm⁻³ and p-Al _x Ga_{1 − x} As layers of any composition with the hole concentration P ≥ 3 × 1019 cm⁻³. [ABSTRACT FROM AUTHOR]