Two-stage quasi-class-E power amplifier in GaN HEMT technology.

This letter presents a two-stage quasi-class-E monolithic microwave integrated circuit power amplifier at 2.0GHz, which is based on field-plated GaN high electron mobility transistor technology. It consists of a driver stage and a power stage. The circuit schematic is described. The amplifier achieves an output power of 37.5dBm into a 50-Omega load, a power added efficiency (PAE) of 50%, and a gain of 18.2dB. A power density of 5.6W/mm is achieved [ABSTRACT FROM PUBLISHER]