Cite
High-performance 1.3-μm InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers.
MLA
Iwai, N., et al. “High-Performance 1.3-Μm InAsP Strained-Layer Quantum-Well ACIS (Al-Oxide Confined Inner Stripe) Lasers.” IEEE Journal of Selected Topics in Quantum Electronics, vol. 5, no. 3, May 1999, pp. 694–700. EBSCOhost, https://doi.org/10.1109/2944.788437.
APA
Iwai, N., Mukaihara, T., Yamanaka, N., Kumada, K., Shimizu, H., & Kasukawa, A. (1999). High-performance 1.3-μm InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers. IEEE Journal of Selected Topics in Quantum Electronics, 5(3), 694–700. https://doi.org/10.1109/2944.788437
Chicago
Iwai, N., T. Mukaihara, N. Yamanaka, K. Kumada, H. Shimizu, and A. Kasukawa. 1999. “High-Performance 1.3-Μm InAsP Strained-Layer Quantum-Well ACIS (Al-Oxide Confined Inner Stripe) Lasers.” IEEE Journal of Selected Topics in Quantum Electronics 5 (3): 694–700. doi:10.1109/2944.788437.