High-Power Quantum-Dot Superluminescent Diodes With p-Doped Active Region.

Authors :: Rossetti, M.
Li, L.
Fiore, A.
Occhi, L.
Velez, C.
Mikhrin, S.
Kovsh, A.
Source :: IEEE Photonics Technology Letters; 9/15/2006, Vol. 18 Issue 18, p1946-1948, 3p
Publication Year :: 2006
Abstract: We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability [ABSTRACT FROM PUBLISHER]