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Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers.

Authors :
Jungho Kim
Hui Su
S. Minin
Shun Lien Chuang
Source :
IEEE Photonics Technology Letters; 5/1/2006, Vol. 18 Issue 9, p1022-1024, 3p
Publication Year :
2006

Abstract

The optical linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is measured below threshold and compared with a theoretical calculation. The optical gain, refractive index, and LEF are well matched with our theoretical model when the thermal effect is isolated by an additional pulse current measurement of the LEF. We also theoretically calculate the LEF of an undoped QD Fabry-Pe´rot (FP) laser assuming that the structure of the undoped FP QD laser is the same as that of the p-doped QD FP laser except the p-type doping. The changes in modal gain and refractive index due to the respective QD ground and excited states are calculated. Based on the theoretical results, we show that the LEF of the p-doped QD laser is smaller than that of the undoped QD laser due to the reduced transparency carrier density. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
10411135
Volume :
18
Issue :
9
Database :
Complementary Index
Journal :
IEEE Photonics Technology Letters
Publication Type :
Academic Journal
Accession number :
52129063
Full Text :
https://doi.org/10.1109/LPT.2006.873456