Buried selectively oxidized AlGaAs structures grown on nonplanar substrates.

We demonstrate a novel buried oxide-grating structure formed by selectively oxidized AlxGa1-xAs grown on nonplanar substrates using low-pressure metal-organic chemical vapor deposition (MOCVD) for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor-distributed-feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum. [ABSTRACT FROM PUBLISHER]