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Limitations of shift-and-ratio based Leff extraction techniques for MOS transistors with halo or pocket implants.
- Source :
- IEEE Electron Device Letters; Mar2000, Vol. 21 Issue 3, p133-136, 4p
- Publication Year :
- 2000
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 21
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 52001658
- Full Text :
- https://doi.org/10.1109/55.823579