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Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al2O3.

Authors :
Hullavarad, S.
Hullavarad, N.
Vispute, R.
Venkatesan, T.
Kilpatrick, S. J.
Ervin, M. H.
Nichols, B.
Wickenden, A. E.
Source :
Journal of Electronic Materials; Aug2010, Vol. 39 Issue 8, p1209-1217, 9p, 4 Diagrams, 4 Graphs
Publication Year :
2010

Abstract

The evolution of ZnO nanowires has been studied under supersaturation of Zn metal species with and without a ZnO thin-film buffer layer on α-Al<subscript>2</subscript>O<subscript>3</subscript> deposited by the pulsed laser ablation technique. The nanowires had diameters in the range of 30 nm to 50 nm and lengths in the range of 5 μm to 10 μm with clear hexagonal shape and $$ [000\bar{1}] $$, $$ [10\bar{1}1] $$, and $$ [10\bar{1}0] $$ facets. X-ray diffraction (XRD) measurements indicated crystalline properties for the ZnO nanostructures grown on pulsed laser deposition (PLD) ZnO nucleation layers. The optical properties were analyzed by photoluminescence (PL) and cathodoluminescence (CL) measurements. The ZnO nanowires were found to emit strong ultraviolet (UV) light at 386 nm and weak green emission as observed by PL measurements. The stoichiometry of Zn and O was found to be close to 1 by x-ray photoelectron spectroscopy (XPS) measurements. The process-dependent growth properties of ZnO nanostructures can be harnessed for future development of nanoelectronic components including optically pumped lasers, optical modulators, detectors, electron emitters, and gas sensors. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
39
Issue :
8
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
51952373
Full Text :
https://doi.org/10.1007/s11664-010-1251-z